Gain and Loss in Waveguides

Maple

Gain and Loss

When light propagates in a gain waveguide, its intensity changes with distance as:

Il=I0exp(Gl)Il = I_0 \exp(Gl)

Where GG is optical gain (different for different mode). And optical gain can be expressed as:

G=ΓgαG = \Gamma g - \alpha

Where Γ\Gamma is optical confinement factor, gg is gain of material, α\alpha is loss of light. And expression of loss is:

α=Γαfr+(1Γ)αc+αs+αcp\alpha = \Gamma \alpha_{fr} + \left(1-\Gamma \right) \alpha_c + \alpha_s +\alpha_{cp}

Where αfr\alpha_{fr} is the free carrier absorption coefficient in the gain medium, αc\alpha_c is the average absorption coefficient in the waveguide layer outside the gain medium, αs\alpha_s is the scattering loss at the hetero-junction interface, and αcp\alpha_{cp} is the coupling loss outside the optical waveguide.
We can calculate material gain:

g=g0ln(J/J0)g = g_0\ln(J/J_0)

Where JJ is current density.

However, in P-I-N diode, not all injected electrons or photons participant in luminescence. So ηinject\eta_{inject} is introduced to describe the efficiency of injection. ηinject\eta_{inject} of electrons is normally reduced by junction leakage and ηinject\eta_{inject} of photons is normally reduced by light transmission:

ηinject=JJleakJ=Psexp(Σαidi)(1exp(αmdm))Ps\eta_{inject} = \frac{J-J_{leak}}{J} = \frac{P_{s}\exp(-\Sigma\alpha_i d_i)(1-\exp(-\alpha_m d_m))}{P_s}

Where JleakJ_{leak} is leakage of current density, αi\alpha_i is optical absorption coefficient for layers over gain medium and did_i is thickness of them, αm\alpha_m and dmd_m is for gain medium. Thus, effective material gain is:

geff=ηinjectgg_{eff} = \eta_{inject}g

How To Measure Gain

The spectrum of optical gain GG in waveguides can be obtained by measuring the spontaneous emission spectrum modulated by Fabry-perot cavity.

G(λ)=(1/L)ln(1/R)+(1/L)lnr(λ)1r(λ)+1G(\lambda) = (1/L) \ln(1/R) + (1/L)\ln\frac{r(\lambda)-1}{r(\lambda)+1}

Where r(λ)r(\lambda) is the ratio of coherent enhancement and weak light intensity at wavelength λ\lambda in the spontaneous emission spectrum, LL is the cavity length, and RR is the reflectivity of the cavity end interface.

If optical gain GG is measured, we can calculate or simulate α\alpha and further calculate the spectrum of material gain gg.

Reference

  1. GaAs/AIGaAs梯度折射率分别限制单量子阱结构中的光增益谱分析
  • Title: Gain and Loss in Waveguides
  • Author: Maple
  • Created at : 2023-05-15 12:50:36
  • Updated at : 2024-11-28 11:07:01
  • Link: https://www.maple367.eu.org/Optics/Principle-of-Lasers/gain-and-loss-in-waveguides/
  • License: This work is licensed under CC BY-NC-SA 4.0.
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